(China (Mainland))
Product Summary
The IS61LV25616AL-10TL is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. The IS61LV25616AL-10TL is fabricated using ISSI high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption device. When CE of the IS61LV25616AL-10TL is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion of the IS61LV25616AL-10TL is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access.
Parametrics
IS61LV25616AL-10TL absolute maximum ratings: (1)VTERM Terminal Voltage with Respect to GND: –0.5 to VDD+0.5 V; (2)TSTG Storage Temperature: –65 to +150 ℃; (3)PT Power Dissipation: 1.0 W.
Features
IS61LV25616AL-10TL features: (1)High-speed access time: 10, 12 ns; (2)CMOS low power operation; (3)Low stand-by power:; (4)Less than 5 mA (typ.) CMOS stand-by; (5)TTL compatible interface levels; (6)Single 3.3V power supply; (7)Fully static operation: no clock or refresh required; (8)Three state outputs; (9)Data control for upper and lower bytes; (10)Industrial temperature available.
Diagrams
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 IS61LV25616AL-10TL |
ISSI |
SRAM 4Mb 256Kx16 10ns Async SRAM 3.3v |
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IS61LV25616AL-10TLI |
ISSI |
SRAM 4Mb 256Kx16 10ns Async SRAM 3.3v |
Data Sheet |
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IS61LV25616AL-10TLI-TR |
ISSI |
SRAM 4Mb 256Kx16 10ns Async SRAM 3.3v |
Data Sheet |
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IS61LV25616AL-10TL-TR |
ISSI |
SRAM 4Mb 256Kx16 10ns Async SRAM 3.3v |
Data Sheet |
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