(China (Mainland))
Product Summary
The MSM514400E-60SJ-R1 is a 1,048,576-word * 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM514400E-60SJ-R1 achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The MSM514400E-60SJ-R1 is available in a 26/20-pin plastic SOJ, 26/20-pin plastic TSOP.
Parametrics
MSM514400E-60SJ-R1 absolute maximum ratings: (1)Voltage on Any Pin Relative to VSS:-0.5V to Vcc+0.5V; (2)Voltage on VSS Supply Relative to VSS:-0.5V to 7.0V; (3)Short Circuit Output Current:50mA; (4)Power Dissipation:1W; (5)Operating Temperature:0℃ to 70℃; (6)Storage Temperature:-55℃ to 150℃.
Features
MSM514400E-60SJ-R1 features: (1)1,048,576-word * 4-bit configuration; (2)Single 5V power supply,±10% tolerance; (3)Input: TTL compatible, low input capacitance; (4)Output: TTL compatible, 3-state; (5)Refresh: 1024 cycles/16 ms, 1024 cycles/128 ms (L-version); (6)Fast page mode, read modify write capability; (7)CAS before RAS refresh, hidden refresh, RAS-only refresh capability; (8)Multi-bit test mode capability.
Diagrams
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 MSM5117400F-60J3-7 |
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IC DRAM 16MBIT 60NS 26SOJ |
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Negotiable |
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MSM5117400F-60T3-K-7 |
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IC DRAM 16MBIT 60NS 26TSOP |
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MSM5117405F-60J3-7 |
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IC DRAM 16MBIT 60NS 26SOJ |
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MSM5117405F-60T3-DK |
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IC DRAM 16MBIT 60NS 26TSOP |
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MSM5118160F-60J3-7 |
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IC DRAM 16MBIT 60NS 42SOJ |
Data Sheet |
Negotiable |
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MSM5118160F-60T3K-MT |
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IC DRAM 16MBIT 60NS 50TSOP |
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